unisonic technologies co., ltd DBC2315 preliminary dual transistor www.unisonic.com.tw 1 of 3 copyright ? 2014 unisonic technologies co., ltd qw-r222-008.b digital transistor (built-in bias resistors) ? description * both the dtb123y chip and dtc115t chip in a sot-26 package. * npn/pnp silicon transistor(built-in resistor type) ? features * built-in bias resistors that implies easy on/off applications. * the bias resistors are thin-film resistors with complete isolation to allow positive input. ? equivalent circuits ? ordering information ordering number package pin assignment packing 123456 DBC2315g-ag6-r sot-26 c1 e1 c2 b2 e2 b1 tape reel note: pin assignment: c: collect or b: bas e: emitter (1) r: tape reel (2) ag6: sot-26 (3) g: halogen free and lead free DBC2315g -ag6 -r (1)packing type (2)package type (3)green package ? marking
DBC2315 preliminary dual transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r222-008.b ? absolute maximum ratings (t a =25c, unless otherwise specified) parameter symbol limits unit collector-base voltage tr1 v cbo -50 v tr2 50 v collector-emitter voltage tr1 v ceo -50 v tr2 50 v emitter-base voltage tr1 v ebo -5 v tr2 5 v collector current tr1 i c -500 ma tr2 100 ma collector power dissipation p c 200 mw junction temperature t j 150 c storage temperature t stg -55~+150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t a =25c, unless otherwise specified) tr1 (pnp) parameter symbol test conditions min typ max unit off characteristics input voltage v in ( off ) v cc =-5v, i out =-100 a -0.3 v v in ( on ) v out =-0.3v, i out =-20ma -2 v output voltage v out ( on ) i out /i in =-50ma/-2.5ma -0.1 -0.3 v input current i in v in =-5v -3.0 ma output current i out ( off ) v cc =-50v, v in =0v -0.5 a on characteristics dc current gain h fe v out =-5v, i out =-50ma 56 small signal characteristics input resistance r 1 1.54 2.2 2.86 k ? resistor ratio r 2 /r 1 3.6 4.5 5.5 transition frequency (note) f t v ce =-10v, i e =50ma, f=100mhz 200 mhz tr2 (npn) parameter symbol test conditions min typ max unit off characteristics collector-base breakdown voltage bv cbo i c =50 a 50 v collector-emitter breakdown voltage bv ceo i c =1ma 50 v emitter-base breakdown voltage bv ebo i e =50 a 5 v collector cutoff current i cbo v cb =50v 0.5 a emitter cutoff current i ebo v eb =4v 0.5 a collector-emitter satu ration voltage v ce ( sat ) i c =1ma, i b =0.1ma 0.3 v on characteristics dc current transfer ratio h fe v ce =5v, i c =1ma 100 250 600 small signal characteristics input resistance r1 70 100 130 k ? transition frequency (note) f t v ce =10v, i e =-5ma, f=100mhz 250 mh z note: transition frequency of the device.
DBC2315 preliminary dual transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r222-008.b utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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